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Publications
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[1]
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Raveen Kumaran, Scott E. Webster, Shawn Penson, Wei Li, Thomas Tiedje, Peng
Wei, and Francois Schiettekatte, Epitaxial neodymium-doped sapphire
films, a new active medium for waveguide lasers, Optics Letters 34
(2009), no. 21, 3358-3360.
[ bib |
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Abstract ]
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[2]
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R.B. Lewis, D.A. Beaton, Xianfeng Lu, and T. Tiedje, Gaas1-xbix light
emitting diodes, Journal of Crystal Growth 311 (2009), 1872 -
1875.
[ bib |
.pdf |
Abstract ]
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[3]
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R. Kumaran, S.E. Webster, S. Penson, Wei Li, and T. Tiedje, Molecular
beam epitaxy growth of neodymium-doped yttrium aluminum perovskite, Journal
of Crystal Growth 311 (2009), no. 7, 2191 - 2194.
[ bib |
DOI |
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http |
Abstract ]
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[4]
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G. Ciatto, E. C. Young, F. Glas, J. Chen, R. Alonso Mori, and T. Tiedje,
Spatial correlation between Bi atoms in dilute
GaAs1-xBix: From random distribution to Bi pairing and
clustering, "Phys. Rev. B"78 (2008), 035325.
[ bib |
DOI |
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Abstract ]
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[5]
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S. Francoeur, S. Tixier, E. Young, T. Tiedje, and A. Mascarenhas, Bi
isoelectronic impurities in GaAs, "Phys. Rev. B"77 (2008), 085209.
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DOI |
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Abstract ]
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[6]
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G. Pettinari, A. Polimeni, M. Capizzi, J. H. Blokland, P. C. M. Christianen,
J. C. Maan, E. C. Young, , and T. Tiedje, Influence of bismuth
incorporation on the valence and conduction band edges of
GaAs1-xBix, "Appl. Phys. Lett."92 (2008), 262105.
[ bib |
DOI |
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Abstract ]
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[7]
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X. Lu, D.A. Beaton, R.B. Lewis, T. Tiedje, and M.B. Whitwick, Effect of
molecular beam epitaxy growth conditions on the Bi content of
GaAs1-xBix, "Appl. Phys. Lett."92 (2008), 192110.
[ bib |
DOI |
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Abstract ]
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[8]
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M.B. Whitwick, T. Tiedje, and Tian Li, Linear smoothing of GaAs(100)
during epitaxial growth on rough substrates, "J. Cryst. Growth"310 (2008),
3192-3196.
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DOI |
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Abstract ]
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[9]
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T. Tiedje, E. C. Young, and A. Mascarenhas, Growth and properties of the
dilute bismide semiconductor GaAs1-xBix a complementary alloy
to the dilute nitrides, "Int. J. Nano."(2008).
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Abstract ]
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[10]
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T. Tiedje and A. Ballestad, Atomistic basis for continuum growth
equation: Description of morphological evolution of GaAs during molecular
beam epitaxy, "Thin Solid Films"516 (2008), no. 12, 3705-3728.
[ bib |
DOI |
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Abstract ]
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[11]
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B. Fluegel, A. Mascarenhas, A. J. Ptak, S. Tixier, E. C. Young, and T. Tiedje,
E+ transition in GaAs1-xNx and
GaAs1-xBix due to isoelectronic-impurity-induced perturbation
of the conduction band, "Phys. Rev. B"76 (2007), 155209.
[ bib |
DOI |
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Abstract ]
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[12]
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D. Karaiskaj, A. Mascarenhas, J. F. Klem, K. Volz, W. Stolz, M. Adamcyk, and
T. Tiedje, High spectral and spatial resolution photoluminescence
experiments on excitons bound to nitrogen pairs in GaAs, "Phys. Rev. B"
76 (2007), 125209.
[ bib |
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Abstract ]
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[13]
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N. Zangenberg, D. A. Beaton, T. Tiedje, S. Tixier, M. Adamcyk, R. Kumaran,
J. A. MacKenzie, E. Nodwell, E. C. Young, and G. I. Sproule, Molecular
beam epitaxy growth of the dilute nitride GaAs1-xNx with a
helical resonator plasma source, Journal of Vacuum Science & Technology A:
Vacuum, Surfaces, and Films 25 (2007), no. 4, 850-856.
[ bib |
DOI |
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Abstract ]
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[14]
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I. C. Robin, R. Kumaran, S. Penson, S. E. Webster, T. Tiedje, and A. Oleinik,
Structure and photoluminescence of Nd:y2o3 grown by molecular
beam epitaxy, Optical Materials In Press, Corrected Proof (2007).
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Abstract ]
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[15]
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E.C. Young, M.B. Whitwick, T. Tiedje, and D. Beaton, Bismuth
incorporation in GaAs1-xBix grown by molecular beam epitaxy
with in-situ light scattering, "Phys. Stat. Sol. C"4 (2007), 1707-1710.
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Abstract ]
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[16]
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B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E.C. Young, and T. Tiedje,
Giant spin-orbit bowing in GaAs1-xBix, "Phys. Rev. Lett."
97 (2006), 067205.
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Abstract ]
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[17]
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D.G. Cooke, E.C. Young, F.A. Hegmann, and T. Tiedje, Electron mobility in
dilute GaAs bismide and nitride alloys measured by time-resolved
terahertz spectroscopy, "Appl. Phys. Lett."89 (2006), 122103.
[ bib |
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Abstract ]
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[18]
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A. Ballestad and T. Tiedje, Emergence of macroscopic structure from
atomistic dynamics in epitaxial film growth, "Phys. Rev. B"74 (2006),
153405.
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Abstract ]
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[19]
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D. Karaiskaj, A. Mascarenhas, M. Adamcyk, E.C. Young, and T. Tiedje,
Ultra narrow photoluminescence transitions of nitrogen cluster bound
excitons in dilute GaAsN, "Phys. Rev. B"(2006).
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Abstract ]
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[20]
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T. Tiedje, K.A. Mitchell, B. Lau, A. Ballestad, and E. Nodwell, Radiation
transport model for ablation hollows on snowfields, "J. Geophys. Res. Earth Surface"(2006).
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Abstract ]
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[21]
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E.C. Young, A.N. Koveshnikov, S. Tixier, K.L. Kavanagh, and T. Tiedje,
Strain relaxation by <100> misfit dislocations in dilute nitride
InGaAsN/GaAs quantum wells, "Phys. Stat. Sol. A"(2005), no. 3-4, 2849-2857.
[ bib |
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Abstract ]
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[22]
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E.C. Young, S. Tixier, and T. Tiedje, Bismuth surfactant growth of the
dilute nitride GaNxAs1-x, "J. Cryst. Growth"279 (2005), no. 3-4,
316-320.
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Abstract ]
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[23]
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M.J. Seong, S. Francoeur, S. Yoon, A. Mascarenhas, S. Tixier, M. Adamcyk, and
T. Tiedje, Bi-induced vibrational modes in GaAsBi, "Superlattices Microstruct."
37 (2005), 394.
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Abstract ]
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[24]
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A. Ballestad, B. Lau, J.H. Schmid, and T. Tiedje, Nonlinear growth in
GaAs molecular beam epitaxy, "Mater. Res. Soc. Symp. Proc."859E (2005), JJ9.6.1.
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Abstract ]
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[25]
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S. Tixier, S.E. Webster, E.C. Young, T. Tiedje, S. Francoeur, A. Mascarenhas,
P. Wei, and F. Schiettekatte, Band gaps of the dilute quaternary alloys
GaNxAs1-x-yBiy and
Ga1-yInyNxAs1-x, "Appl. Phys. Lett."86 (2005), 112113.
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Abstract ]
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[26]
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P. Wei, S. Tixier, M. Chicoine, S. Francoeur, A. Mascarenhas, T. Tiedje, and
F. Schiettekatte, Ion beam characterization of
GaAs1-x-yNxBiy epitaxial layers, "Nucl. Inst. Meth. Phys. Res. B"
219-220 (2004), 671.
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Abstract ]
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[27]
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Anders Ballestad, Thomas Tiedje, and Jens Schmid, Comment on 'Transient
Evolution of Surface Roughness on Patterned GaAs(001) During
Homoepitaxial Growth', "Phys. Rev. Lett."93 (2004), 159604.
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Abstract ]
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[28]
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B. J. Ruck, A. Koo, U. D. Lanke, F. Budde, H. J. Trodahl, G. V. M. Williams,
A. Bittar, J. B. Metson, E. Nodwell, T. Tiedje, A. Zimina, and
S. Eisebitt, Filled and empty states of disordered GaN studied by
X-ray absoption and emission, "J. Appl. Phys."96 (2004), 3571-3573.
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Abstract ]
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[29]
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Jens H. Schmid, Tom Tiedje, Richard Mar, and Anders Ballestad, Surface
pattern transfer in GaAs with molecular beams of Cl2, "Phys. Rev. B"
70 (2004), 045315.
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Abstract ]
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[30]
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Anders Ballestad, Thomas Tiedje, Jens Schmid, Ben Ruck, and Martin Adamcyk,
Predicting GaAs surface shapes during MBE regrowth on patterned
substrates, "J. Cryst. Growth"271 (2004), no. 1-2, 13-21.
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Abstract ]
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[31]
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Eric Nodwell, Martin Adamcyk, Anders Ballestad, Thomas Tiedje, Sebastien
Tixier, Scott E. Webster, Erin C. Young, Alex Moewes, E. Z. Kurmaev, and Tony
van Buuren, Tight-binding model for the x-ray absorption and emission
spectra of dilute GaNxAs1-x at the nitrogen K edge, "Phys. Rev. B"
69 (2004), 155210-155213.
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Abstract ]
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[32]
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Jens H. Schmid, Richard Mar, and Thomas Tiedje, Surface pattern evolution
during thermal Cl2 etching of GaAs(001), "Appl. Phys. Lett."82 (2003),
no. 25, 4549-4551.
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Abstract ]
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[33]
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Sebastien Tixier, Martin Adamcyk, Erin C. Young, Jens H. Schmid, and Thomas
Tiedje, Surfactant enhanced growth of GaNAs and InGaNAs
using bismuth, "J. Cryst. Growth"251 (2003), no. 1-4, 449-454.
[ bib |
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Abstract ]
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[34]
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Sebastien Tixier, Martin Adamcyk, Thomas Tiedje, S. Francoeur, A. Mascarenhas,
Peng Wei, and F. Schiettekatte, Molecular beam epitaxy growth of
GaAsBi, "Appl. Phys. Lett."82 (2003), no. 14, 2245-2247.
[ bib |
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Abstract ]
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[35]
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S. Francoeur M.-J. Seong, A. Mascarenhas, Sebastien Tixier, Martin Adamcyk, and
Thomas Tiedje, Band Gap of GaAs1-xBix, 0<x<3.6%,
"Appl. Phys. Lett."82 (2003), no. 22, 3874-3876.
[ bib |
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Abstract ]
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[36]
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Jens H. Schmid, Anders Ballestad, Ben J. Ruck, Martin Adamcyk, and Thomas
Tiedje, Kinetic roughening of GaAs(001) during thermal Cl2
etching, "Phys. Rev. B"65 (2002), no. 20, 155315.
[ bib |
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Abstract ]
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[37]
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Martin Adamcyk, Jens H. Schmid, Thomas Tiedje, A. Koveshnikov, A. Chaboun,
V. Fink, and Karen L. Kavanagh, Comparison of strain relaxation in
InGaAsN and InGaAs thin films, "Appl. Phys. Lett."80 (2002),
no. 23, 4357-4359.
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Abstract ]
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[38]
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C. Kaiser, Yuval Levy, Thomas Tiedje, and Jeff F. Young, Determining the
profile of textured membranes by the alpha particle energy loss method, "Appl. Phys. Lett."
80 (2002), no. 14, 2607-2609.
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Abstract ]
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[39]
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Arman Rahmim, Sebastien Tixier, Thomas Tiedje, S. Eisebitt, M. Loergen,
R. Scherer, W. Eberhardt, J. Luening, and A. Scholl, Interference
between magnetism and surface roughness in coherent soft x-ray scattering,
"Phys. Rev. B"65 (2002), no. 23, 235421.
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Abstract ]
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[40]
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Anders Ballestad, Ben J. Ruck, Jens H. Schmid, Martin Adamcyk, Eric Nodwell,
Christine Nicoll, and Thomas Tiedje, Surface morphology of GaAs
during molecular beam epitaxy growth: comparison of experimental data with
simulations based on continuum growth equations, "Phys. Rev. B"65 (2002),
no. 20, 205302.
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Abstract ]
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[41]
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Martin Adamcyk, Sebastien Tixier, Ben J. Ruck, Jens H. Schmid, Thomas Tiedje,
V. Fink, M. Jeffries, D. Karaiskaj, Karen L. Kavanaugh, and M. Thewalt,
Faceting transition in epitaxial growth of dilute
GaNxAs1-x films on GaAs, "J. Vac. Sci. Technol. B"19 (2001), no. 4,
1417-1421.
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Abstract ]
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[42]
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Anders Ballestad, Ben J. Ruck, Martin Adamcyk, Thomas Pinnington, and Thomas
Tiedje, Evidence from the surface morphology for nonlinear growth of
epitaxial GaAs films, "Phys. Rev. Lett."86 (2001), no. 11, 2377-2380.
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Abstract ]
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[43]
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Jens H. Schmid, Martin Adamcyk, Jim A. MacKenzie, Ben J. Ruck, and Thomas
Tiedje, Cl2-etching and MBE-regrowth for GaAs/AlOx
photonic crystals, Mat. Res. Soc. Symp. Proc., vol. 637, 2001, p. E4.4.
[ bib |
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Abstract ]
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[44]
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Martin Adamcyk, Anders Ballestad, Thomas Pinnington, Thomas Tiedje, M. Davies,
and Yan Feng, Smoothing of textured GaAs surfaces during molecular
beam epitaxy growth, "J. Vac. Sci. Technol. B"18 (2000), no. 3, 1488-1492.
[ bib |
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Abstract ]
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[45]
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Martin Adamcyk, Thomas Pinnington, Anders Ballestad, and Thomas Tiedje,
Effect of the starting surface on the morphology of MBE grown
GaAs, "Mater. Sci. Eng. B"75 (2000), no. 2, 153-156.
[ bib |
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Abstract ]
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[46]
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F Sfigakis, P. Paddon, V. Pacradouni, Martin Adamcyk, Christine Nicoll, A. R.
Cowan, Thomas Tiedje, and Jeff F. Young, Near infrared refractive index
of thick, laterally oxidized AlGaAs cladding layers, "J. Lightwave Technol."18
(2000), no. 2.
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[47]
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S. M. Sadeghi, Jochen Meyer, Thomas Tiedje, and Mario Beaudouin,
Multilevel infrared coupling of excitons in quantum-well
semiconductors, "IEEE J. Quant. Electron."36 (2000), no. 11, 1267-1271.
[ bib |
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Abstract ]
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[48]
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Martin Adamcyk, S. Eisebitt, A. Karl, Christine Nicoll, Thomas Pinnington,
R. Scherer, Thomas Tiedje, and W. Eberhard, Surface roughness and
resonant scattering effects in soft X-ray speckle from random semiconductor
interfaces, "Surf. Rev. Lett."6 (2000), 1121-1128.
[ bib ]
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[49]
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Martin Adamcyk, S. Eisebitt, A. Karl, Christine Nicoll, Thomas Pinnington,
R. Scherer, Thomas Tiedje, and W. Eberhardt, Coherent soft X-ray
scattering from InP islands on a semiconductor substrate, "J. Vac. Sci. Technol. B"
17 (1999), no. 4, 1728-1732.
[ bib |
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Abstract ]
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[50]
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Thomas Pinnington, Y. Levy, Jim A. MacKenzie, and Thomas Tiedje, Real
time monitoring of InAs/GaAs quantum dot growth using ultraviolet
light scattering, "Phys. Rev. B"60 (1999), no. 23, 15901-15909.
[ bib |
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Abstract ]
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[51]
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Sebastien Tixier, Y. Zheng, Thomas Tiedje, G. Cooper, and C. Brion,
Electron momentum spectroscopy of surfaces, "Surf. Rev. Lett."6 (1999),
no. 5, 579-584.
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[52]
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S. Ritchie, M. Beaudoin, Thomas Tiedje, and Thomas Pinnington, Growth on
InP islands on LaF3/InP(111)B heterostructures by molecular
beam epitaxy, "Japan. J. Appl. Phys."38 (1999), L192-L194.
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[53]
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Jeff F. Young, P. Paddon, V. Pacradouni, Thomas Tiedje, and Shane R. Johnson,
Photonic lattices in semiconductor waveguides, Future Trends in
Microelectronics: Off the Beaten Path (S. Luryi, J. Xu, and A. Zaslavsky,
eds.), Wiley Interscience, New York, 1999.
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[54]
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M. Beaudoin, Martin Adamcyk, Y. Levy, J.A. MacKenzie, S. Ritchie, Thomas
Tiedje, Z. Gelbart, U. Giesen, and I. Kelson, In-situ real time
monitoring of thickness and composition in MBE using alpha particle energy
loss, "J. Cryst. Growth"201/202 (1999), 26-30.
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Abstract ]
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[55]
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Y. Levy, Anders Ballestad, M. Davies, Y. Feng, I. Kelson, W. Mandeville,
V. Pacradouni, Al Schmalz, Thomas Tiedje, and Jeff F. Young, In-situ
etch rate measurements by alpha-particle energy loss, Proceedings, Spring
MRS, 1999.
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[56]
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Martin Adamcyk, M. Beaudoin, I. Kelson, Y. Levy, and Thomas Tiedje,
Diffusion studies of Ra and Pb in GaAs by the alpha-particle
energy loss method, "J. Appl. Phys."84 (1998), no. 11, 6003-6006.
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[57]
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M. Beaudoin, Martin Adamcyk, Z. Gelbart, U. Giesen, I. Kelson, Y. Levy,
J. Mackenzie, and Thomas Tiedje, Film thickness and composition
monitoring during growth by molecular beam epitaxy using alpha particle
energy loss, "Appl. Phys. Lett."72 (1998), no. 25, 3288-3290.
[ bib |
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Abstract ]
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[58]
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S. Eisebitt, A. Karl, R. Scherer, W. Eberhardt, Martin Adamcyk, Thomas Tiedje,
and C. Pistonesi, Speckle with soft X-rays: A demonstration, "Synchr. Rad. News"
11 (1998).
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[59]
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S. Eisebitt, J. Luning, J.E. Rubensson, W. Settels, A. Eberhard, S. Patitsas,
and Thomas Tiedje, Resonant inelastic soft X-ray scattering at the
Si L-3 edge: Experiment and theory, "J. Electron Spect. Rel. Phen."93 (1998), no. N1-3,
245-250.
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[60]
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D. Rogers and Thomas Tiedje, Scanning tunneling microscopy and low energy
electron diffraction study of the formation of a (3x(3r30o reconstruction on
the hydrogen etched Si(111) 1x1 surface, "J. Vac. Sci. Technol. B"15 (1997), no. 5,
1641-1646.
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Abstract ]
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[61]
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Thomas Pinnington, Christian Lavoie, and Thomas Tiedje, Effect of growth
conditions on surface roughening of relaxed InGaAs on GaAs, "J. Vac. Sci. Technol. B"
15 (1997), no. 4, 1265-1269.
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Abstract ]
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[62]
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M. Beaudoin, A. J. G. deVries, Shane R. Johnson, H. Laman, and Thomas Tiedje,
Optical absorption edge of semi-insulating GaAs and InP at high
temperatures, "Appl. Phys. Lett."70 (1997), no. 26, 3540-3542.
[ bib |
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Abstract ]
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[63]
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R. Konsek, Robin J. N. Coope, T. P. Pearsall, and Thomas Tiedje,
Selective surface modifications with a scanning tunneling microscope,
"Appl. Phys. Lett."70 (1997), no. 14, 1846-1848.
[ bib |
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Abstract ]
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[64]
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M. Kanskar, P. Paddon, V. Pacradouni, R. Morin, A. Busch, Jeff F. Young,
Shane R. Johnson, Jim A. MacKenzie, and Thomas Tiedje, Two dimensional
photonic lattice in an air-bridged semiconductor waveguide, "Appl. Phys. Lett."70
(1997), no. 11, 1438-1440.
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Abstract ]
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[65]
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S. Eisebitt, S. N. Patitsas, Thomas Tiedje, Tony van Buuren, J. Luning, J.E.
Rubensson, and W. Eberhardt, Soft X-ray fluorescence of porous
silicon: Electronic structure of Si nanostructures, "Europhys. Lett."37
(1997), no. 2, 133-138.
[ bib |
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Abstract ]
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[66]
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S. Ritchie, Shane R. Johnson, Christian Lavoie, J. A. Mackenzie, Thomas Tiedje,
and R. Streate, Semiconductor substrate cleaning and surface morphology
in molecular beam epitaxy, ß374 (1997), 418-426.
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[67]
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M. Beaudoin, Jim A. MacKenzie, Thomas Pinnington, S. Ritchie, Thomas Tiedje,
Z. Gelbart, U. Giesen, I. Kelson, Y. Levy, A. J. SpringThorpe, and
R. Streater, In situ thickness measurements in molecular beam epitaxy
using alpha particle energy loss, "Surf. Coat. Tech."94-95 (1997), 374-378.
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[68]
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Karen L. Kavanaugh, R. S. Goldman, Christian Lavoie, B. Leduc, Thomas
Pinnington, Thomas Tiedje, D. Klug, and J. Tse, In-situ detection of
misfit dislocations by light scattering, "J. Cryst. Growth"174 (1997), 550-557.
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[69]
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R.G. DeCorby, R.I. MacDonald, M. Beaudoin, Thomas Pinnington, Thomas Tiedje,
and F. Gouin, Elimination of low frequency gain in
InalAs/InGaAs metal semiconductor metal photodetectors by silicon
nitride passivation, "J. Electron. Mater."26 (1997), L25.
[ bib ]
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[70]
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Robin J. N. Coope, Thomas Tiedje, S. L. Konsek, and T. P. Pearsall,
Surface modification and imaging of H-passivated Si with a combined
scanning tunneling and SEM, "Ultramicros."68 (1997), 257-266.
[ bib |
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[71]
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I. Kelson, Y. Levy, D. Racah, E. Redmard, M. Beaudoin, Thomas Pinnington,
Thomas Tiedje, and U. Giesen, The applicability of implanted
α-sources to thickness and stoichiometry measurements of thin films,
"J. Phys. D: Appl. Phys."30 (1997), 131-136.
[ bib |
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Abstract ]
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[72]
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G. D. Cody and Thomas Tiedje, A learning curve approach to projecting
cost and performance for photovoltaic technologies, Proc. SPIE, 1997,
p. 3138.
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[73]
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Shane R. Johnson and Thomas Tiedje, Effect of substrate thickness, back
surface texture, reflectivity, and thin film interference on optical band-gap
thermometry, "J. Cryst. Growth"175/176 (1997), 273-280.
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[74]
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Thomas Pinnington, Thomas Tiedje, Christian Lavoie, B. Haveman, and Eric
Nodwell, Surface morphology dynamics in strained epitaxial
InGaAs, "Phys. Rev. Lett."79 (1997), 1698.
[ bib |
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Abstract ]
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[75]
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V. Pacradouni, R. Morin, M. Kanskar, Jeff F. Young, Shane R. Johnson, and
Thomas Tiedje, Guided mode dispersion near the band edge of
InGaAs/AlGaAs/GaAs single quantum well GRINSCH waveguides,
"J. Appl. Phys."80 (1996), no. 10, 6039-6044.
[ bib |
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Abstract ]
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[76]
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D. Rogers and Thomas Tiedje, Binding energies of hydrogen to the
Si(111) 7x7 surface by statistical scanning tunneling microscopy, "Phys. Rev. B"
53 (1996), no. 20, R13227-R13230.
[ bib |
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Abstract ]
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[77]
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Christian Lavoie, Thomas Pinnington, Thomas Tiedje, J. L. Hutter, G. Soerensen,
and R. Streater, Indium-induced smoothing of GaAs films during
MBE growth, "Can. J. Phys."74 (1996), S47-S53.
[ bib |
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Abstract ]
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[78]
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S. Eisebitt, J. Luning, J. E. Rubensson, Tony van Buuren, S. N. Patitsas,
Thomas Tiedje, M. Berger, R. Arens-Fischer, S. Frohnhoff, and W. Eberhardt,
Quantum confinement effects in the soft X-ray fluoresence spectra of
porous silicon nanostructures, "Solid State Commun."97 (1996), no. 7, 549-552.
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.pdf ]
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[79]
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S. Eisebitt, J. Luning, J. E. Rubesson, Tony van Buuren, S. N. Patitsas, Thomas
Tiedje, M. Berger, R. Arens-Fischer, S. Frohnhoff, and W. Eberhardt,
Soft X-ray emission of porous silicon nanostructures, "J. Electron Spect. Rel. Phen."
79 (1996), 135-138.
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[80]
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G. Cody and T. Tiedje, A learning curve approach to projecting cost and
performance in thin film photovoltaic, Mat. Res. Symp. Proc. J (1996).
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.pdf ]
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[81]
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Christian Lavoie, Thomas Pinnington, Eric Nodwell, Thomas Tiedje, R. S.
Goldman, Karen L. Kavanaugh, and J. L. Hutter, Relationship between
in-situ surface morphology and strain relaxation during growth of
InGaAs strained layers, "Appl. Phys. Lett."67 (1995), no. 25, 3744-3746.
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.pdf |
Abstract ]
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[82]
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D. D. Perovic, M. R. Castell, A. Howie, Christian Lavoie, Thomas Tiedje, and
J. S. W. Cole, FEG SEM imaging of compositional and doping layer
semiconductor superlattices, "Ultramicros."58 (1995), 104-113.
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.pdf ]
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[83]
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Shane R. Johnson and Thomas Tiedje, Temperature dependence of the
Urbach edge in GaAs, "J. Appl. Phys."78 (1995), no. 9, 5609-5613.
[ bib |
.pdf |
Abstract ]
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[84]
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A. Mak, Shane R. Johnson, Christian Lavoie, Jim A. MacKenzie, and Thomas
Tiedje, Carbon filament source for p-type doping in molecular beam
epitaxy, "J. Vac. Sci. Technol. B"12 (1994), no. 3, 1407.
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[85]
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Shane R. Johnson, Christian Lavoie, Eric Nodwell, Thomas Tiedje, and Jim A.
MacKenzie, Factors affecting the temperature uniformity of
semiconductor substrates in molecular-beam epitaxy, "J. Vac. Sci. Technol. B"12
(1994), no. 2, 1225-1228.
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.pdf ]
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[86]
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Tony van Buuren, Thomas Tiedje, J. R. Dahn, and B. M. Way, Photoelectron
spectroscopy measurements of the band gap in porous silicon, "Appl. Phys. Lett."
63 (1993), no. 21, 2911-2913.
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.pdf |
Abstract ]
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[87]
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Shane R. Johnson, Christian Lavoie, and Thomas Tiedje, Semiconductor
substrate temperature measurement by diffuse reflectance spectroscopy in
molecular beam epitaxy, "J. Vac. Sci. Technol. B"11 (1993), no. 3, 1007-1010.
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.pdf ]
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[88]
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Thomas Tiedje, K. M. Colbow, Y. Gao, J. R. Dahn, J. N. Reimers, and D. C.
Houghton, Role of Coulomb repulsion in 4f orbitals in electrical
excitation of rare-earth impurities in semiconductors, "Appl. Phys. Lett."61
(1992), no. 11, 1296-1297.
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.pdf |
Abstract ]
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[89]
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Tony van Buuren, M. K. Weilmeier, I. Athwal, K. M. Colbow, Jim A. MacKenzie,
Thomas Tiedje, P. C. Wong, and K. A. R. Mitchell, Oxide thickness
effect and surface roughening in the desorption of the oxide from GaAs,
"Appl. Phys. Lett."59 (1991), no. 4, 464-465.
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.pdf |
Abstract ]
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[90]
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M.K. Weilmeier, K.M. Colbow, T. Tiedje, T. Van Buuren, and Li Xu, A new
optical measurement technique for semiconductor substrates in molecular beam
epitaxy., "Can. J. Phys."(1990), 422-426.
[ bib |
.pdf |
Abstract ]
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[1]
|
S.R. Johnson , C. Lavoie, M. Nissen, T. Tiedje, Optical
Apparatus for Measuring Temperature of a Substrate Material with a
Temperature Dependent Bandgap, US #5388909 (1994)
|
|
[2]
|
S.R. Johnson, C. Lavoie, M. Nissen, T. Tiedje, Optical Method
for Measuring Temperature of a Substrate Material with a Temperature
Dependent Bandgap, U.S. #5568978 (1996).
|
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[3]
|
L. Whitehead, T. Tiedje, R. Coope, Method and Apparatus for
Controllable Frustration of Total Internal Reflection, US 5,999,307
(1999)
|
|
[4]
|
S.R. Johnson, T. Tiedje, Method for Determining the Temperature
of Semiconductor Substrates from Bandgap Spectra, US 6,116,779 (2000).
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| |
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[1]
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Arvin N. Yazdi, Lensless imaging of red blood cells using coherent soft
x-ray scattering, Master's thesis, University of British Columbia, Canada,
March 2007.
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.pdf |
Abstract ]
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[2]
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Erin Christinia Young, GaNAs and GaAsBi: Structural and electronic
properties of two resonant state semiconductor alloys, Ph.D. thesis,
University of British Columbia, Canada, December 2006.
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.pdf |
Abstract ]
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[3]
|
Anders Ballestad, Epitaxial growth dynamics in Gallium Arsenide,
Ph.D. thesis, University of British Columbia, Canada, March 2005.
[ bib |
.pdf |
Abstract ]
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[4]
|
Scott Webster, Semiconductor light source for optical coherence
tomography, Master's thesis, University of British Columbia, Canada,
November 2004.
[ bib |
.pdf |
Abstract ]
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[5]
|
Jens H. Schmid, Evolution of surface texture in thermal chlorine etching
and molecular beam epitaxy of Gallium Arsenide, Ph.D. thesis, University
of British Columbia, Canada, May 2004.
[ bib |
.pdf |
Abstract ]
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[6]
|
Richard Elliot Mar, Modeling surface pattern evolution during thermal
Cl2 etching of GaAs (001), Master's thesis, University of British
Columbia, Canada, March 2004.
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.pdf |
Abstract ]
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[7]
|
Daniel A. Beaton, Temperature dependence of photoluminescence of the
dilute nitride semiconductor GaNxAs1-x, Master's thesis,
University of British Columbia, Canada, October 2003.
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.pdf |
Abstract ]
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[8]
|
Michael Brian Whitwick, Light activated Cl2 etching of GaAs and
optical holographic pattern formation, Master's thesis, University of
British Columbia, Canada, April 2003.
[ bib |
.pdf |
Abstract ]
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[9]
|
Martin Adamcyk, Epitaxial growth of dilute nitride-arsenide compound
semiconductors by molecular beam epitaxy, Ph.D. thesis, University of
British Columbia, Canada, April 2002.
[ bib |
.pdf |
Abstract ]
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[10]
|
Eric Strom, Optical and electrical properties of dilute
GaNxAs1-x, Master's thesis, University of British Columbia,
Canada, January 2002.
[ bib |
.pdf |
Abstract ]
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[11]
|
Arman Rahmim, Analysis of coherent resonant x-ray scattering and
reconstruction of magnetic domains, Master's thesis, University of British
Columbia, Canada, November 2001.
[ bib |
.pdf |
Abstract ]
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[12]
|
Thomas Henry Pinnington, Surface morphology dynamics in strained-layer
epitaxy, Ph.D. thesis, University of British Columbia, Canada, December
1999.
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.pdf |
Abstract ]
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[13]
|
Anders Ballestad, Smoothing of patterned Gallium Arsenide surface
during epitaxial growth, Master's thesis, University of British Columbia,
Canada, July 1998.
[ bib |
.pdf |
Abstract ]
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